ΜΑΤΘΑΙΟΣ ΖΕΡΒΟΣ
ΖΕΡΒΟΣ ΜΑΤΘΑΙΟΣ
ZERVOS MATTHEW
...
ΑΝΑΠΛΗΡΩΤΗΣ/ΡΙΑ ΚΑΘΗΓΗΤΗΣ/ΡΙΑ
Πολυτεχνική Σχολή
Green Park
Λεωφ. Αγλαντζιας 91
Tel 22894523
+357 22892194
+357 22892254
https://orcid.org/0000-0002-6321-233X

Προσωπικό Προφίλ

  Flowers 1  Wreath2  Full Flower  Tracks Embleem 
 
                                                               
M.Zervos obtained his BEng (Honours) in Electrical and Electronic Engineering from the University of Surrey between 1987-1991 and MSc in Microelectronic Materials and Devices at the University of Manchester Institute of Science and Technology (UMIST) between 1991-1992. Completed a PhD in semiconductor physics on 'Delta–doping of InGaAs quantum wells grown by Molecular Beam Epitaxy' in the Department of Physics at the University of Wales,Cardiff between 1994-1998.
Has worked for (a) STC Technology Ltd at Harlow and LG Semiconductors at Cardiff in the UK (b) Philips Research Laboratories in Eindhoven the Netherlands, on semiconductors and nanotechnology and (c) the University of Crete and the Foundation Of Research and Technology Hellas (FORTH) at the Institute of Electronic Structure and LASERs (IESL) in Greece.
He has a broad range of expertise covering synthesis, electrical ,structural and optical characterization of semiconductor materials, device processing including optical and electron beam lithography and computational semiconductor physics. M.Zervos joined the University in August 2006 and set up the Nanostructured Materials and Devices Laboratory in May 2008 for the growth of semiconductor nanowires and the study of their fundamental properties for energy related device applications .
He currently teaches mechatronics as part of the undergraduate curriculum and semiconductor physics to postgraduates undertaking research in the materials science group of the department but also for postgraduates from other departments e.g. electrical engineering and physics.
Finally he is a member of the American Chemical Society (ACS), chartered engineer (CEng) of the Institute of Electronic and Electrical Engineers (IEE) and also holds the title of chartered physicist (CPhys) of the Institute of Physics (IoP) in the UK.

Research activities are currently focused on the synthesis of n- and p-type metal oxide and chalcogenide semiconductor nanowires as well as nitrides for the fabrication of all-inorganic quantum dot sensitized nanowire solar cells, supercapacitors and for the photocatalytic generation of hydrogen.

[1] M.L.Ke, X.Chen, M.Zervos, R.Nawaz, M.Elliott, D.I.Westwood and P.Blood, 'Optical and electrical properties of selectively δ-doped strained InxGa1-xAs/GaAs quantum wells', Journal of Applied Physics, 79, No 5 , p2627 (1996).

[2] M.Zervos, A.Bryant, M.Elliott, M.Beck and M.Ilegems, 'Magnetotransport of delta(δ)-doped In0.53Ga0.47As on InP(001) grown between 390°C -575°C by molecular beam epitaxy', Applied Physics Letters, 72, No 20, p2601 (1998).

[3] M.Zervos, D.I.Westwood and M.Elliott, 'Light induced mobility enhancement in delta(δ)-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)' Applied Physics Letters, 74, No 14, p2026 (1999).

[4] M.Zervos, M.Elliott and D.I.Westwood,'Surface micro-roughness and transport properties of Si δ-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular beam epitaxy on GaAs(001) and GaAs(111)B, Applied Physics Letters , 75, No 16, p 2548 (1999).

[5] R.A.Shepherd, M.Elliott, W.G.Herrenden-Harker, M.Zervos and P.R.Morris, 'Experimental observation of the de Haas-van Alphen effect in a multiband quantum well sample', Physical Review B, 60, No 16, p 11277 (1999).

[6] S.Mikroulis, V.Cimalla, A.Kostopoulos, G.Konstantinidis, G.Drakakis, M.Zervos, M.Cengher, and A.Georgakilas, 'An Investigation of the nitridation of Al2O3(0001) substrates by a nitrogen radio frequency plasma source'. Microelectronics, Microsystems & Nanotechnology Conference Proceedings MMN 2000, p.135 (2000).

[7] M. Zervos, A. Kostopoulos , G. Constantinidis , M.Kayambaki and A. Georgakilas, 'An investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self consistent Poisson-Schrödinger calculations and capacitance-voltage profiling', Journal of Applied Physics, 91, No 7, p 4387 (2001).

[8] M.Zervos, A.Kostopoulos, G.Constantinidis, M.Kayambaki, S.Mikroulis, N.Flytzanis and A.Georgakilas, 'The pinch-off behavior and charge distribution in AlGaN-GaN-AlGaN-GaN double heterostructure field effect transistors', Physica Status Solidi (a), 188, No 1, p259-262 (2001).

[9] M.Androulidaki, A.Georgakilas, F.Peiro, K.Amimer, M.Zervos, K.Tsagaraki, M.Dimakis and A.Cornet, 'Investigation of Different Si (111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE' Physica Status Solidi (a), 188, No 2, p515-518 (2001).

[10] J.Simon, R.Langer, A.Barski, M.Zervos and N.T.Pelekanos, 'Residual Doping Effects on the Amplitude of Polarization-induced Electric Fields in GaN/AlGaN Quantum Wells' Physica Status Solidi (a), 188, No 2, p867-870 (2001).

[11] A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, Ph. Komninou, Th. Kehagias, Th. Karakostas , 'Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE' Physica Status Solidi (a), 188, No 2, p567-570 (2001).

[12] M.Zervos, 'An investigation of spin-polarized resonant tunneling through ferromagnet/insulator double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations', Journal of Applied Physics, 94, No 3, p.1776-1782 (2003).Also published in the Virtual Journal of Nanoscale Science and Technology, 8, No.4 (2003).

[13] M.Zervos and L.F.Feiner, 'Electronic structure of piezeoelectric InAs/InP/InAs/InP/InAs (111) nanowires' Journal of Applied Physics, 95, No.1,p.1-11, January 1 (2004). Cited in Nature Materials 3, 769–773 (1 November 2004).

[14] M.Zervos, C.Xenogianni, G.Deligeorgis, M.Androulidaki, P.Savidis, Z.Hatzopoulos and N.Pelekanos, 'InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates' Phys.Stat.Sol (c) 3, p 3988-3991,(2006).

[15] E.Iliopoulos, M.Zervos, A.Adikimenaki, K.Tsagaraki and A.Georgakilas, 'Properties of Si doped GaN and AlGaN/GaN heterostructures grown by RF MBE on high resistivity Fe doped GaN' SuperLattices and Microstructures, 40 p.313 (2006).

[16] G.E. Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, 'Influence of polarization field on the lasing properties of III-V nitride quantum wells', Physica E : Low dimensional systems and nanostructures, 32 , p.558(2006).

[17] M.Zervos, 'Properties of the ubiquitous p-n junction in semiconductor nanowires', Semiconductor Science and Technology, 23 , p.075016 (2008).

[18] M.Zervos, N.Pelekanos 'One-dimensional transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers', Journal of Applied Physics, 104, 054302-1(2008).

[19] G.E.Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, 'Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers' , Journal Of Applied Physics, 104, p.113101(2008).

[20] A.Othonos, M.Zervos and M.Pervolaraki, 'Ultra fast carrier relaxation of InN nanowires grown by reactive vapor transport', Nanoscale Research Letters, 4, p.122-129 (2009).

[21] M.Zervos, D.Tsokou, M.Pervolaraki and A.Othonos, 'Low temperature growth of In2O3 and InN nanocrystals on Si(111) by chemical vapor deposition via the sublimation of NH4Cl ', Nanoscale Research Letters, 4, p. 491 (2009).

[22] A.Othonos, M.Zervos and D.Tsokkou, 'Femtosecond carrier dynamics in In2O3 nanocrystals', Nanoscale Research Letters, 4, p.526 (2009).

[23] A.Othonos, M.Zervos and D.Tsokkou, 'Tin oxide nanowires : Influence of trap states on ultra fast carrier relaxation', Nanoscale Research Letters, 4, p.828 (2009).

[24] M.Zervos and A.Othonos, 'Synthesis of tin nitride nanowires by chemical vapor deposition', Nanoscale Research Letters , 4, p.1103 (2009).

[25] D.Tsokkou, A.Othonos and M.Zervos, 'Defect states of CVD grown GaN nanowires : Effects and mechanisms in the relaxation of carriers', Journal of Applied Physics 106, p.054311 (2009).

[26] D.Tsokou, M.Zervos and A.Othonos, 'Ultrafast spectroscopy of In2O3 nanowires grown by the vapor-liquid-solid method ', Journal Of Applied Physics 106, p. 084307(2009).

[27] A.Othonos and M.Zervos, 'Carrier relaxation dynamics in tin nitride nanowires grown by chemical vapor deposition', Journal of Applied Physics, 106 p. 114303(2009).

[28] M.Zervos, P.Papageorgiou and A.Othonos, 'High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition', Journal Of Crystal Growth,312,p.656 (2010).

[29] A.Othonos and M.Zervos, 'Carrier dynamics in indium sulphide nanowires grown by chemical vapor deposition', Physica Status Solidi A 207, p.2258(2010).

[30] M.Zervos and A.Othonos, 'Hydride assisted growth of GaN nanowires on Au/Si(001) via the direct reaction of Ga with NH3 and H2', Journal of Crystal Growth, 312, p.2631(2010).

[31] M.Zervos and A.Othonos , 'Enhanced growth and photoluminescence properties of SnxNy ( x > y) nanowires grown by halide chemical vapor deposition', Journal Of Crystal Growth, 316, p.25, (2011).

[32] A.Othonos, M.Zervos and C.Christofides, 'Carrier dynamics in β-Ga2O3 nanowires', Journal Of Applied Physics, 108, p.124302(2010). Also published in the Virtual Journal of Ultrafast Science, 10, No.1 (2011).

[33] A.Othonos, M.Zervos and C.Christofides, 'A systematic investigation into the conversion of b-Ga2O3 to GaN nanowires using NH3 and H2 : Effects on the photoluminescence ' Journal of Applied Physics, 108, p.124319(2010). Also published in the Virtual Journal of Ultrafast Science 10, No.1 (2011).

[34] M.Zervos and A.Othonos, 'Gallium hydride vapor phase epitaxy of GaN nanowires' Nanoscale Research Letters, 6, p.262 (2011).

[35] P.Papageorgiou, M.Zervos and A.Othonos, 'An investigation into the conversion of In2O3 to InN nanowires ' Nanoscale Research Letters, 6, p.311 (2011).

[36] M.Zervos and A.Othonos, 'A systematic study of the nitridation of SnO2 nanowires grown via the vapor liquid solid mechanism' Journal Of Crystal Growth 340,p.28(2012).

[37] A.Othonos and M.Zervos, 'Hole carrier relaxation dynamics in p-type CuO nanowires', Nanoscale Research Letters 6 p.622 (2011).

[38] M.Zervos, C.Karipi and A.Othonos, 'The nitridation of ZnO nanowires', Nanoscale Research Letters, 7,p.175 (2012).

[39] M.Zervos, M.Demetriou, T.Krassia , A.Othonos, 'Metal-oxide nanowire growth using hybrid methacrylate noble metal : Au and Pd nanostructured catalysts', RCS Advances, 2,p.4370 (2012).

[40] M.Zervos, C.Karipi and A.Othonos,' Zn3N2 nanowires : Growth, properties and oxidation', Nanoscale Research Letters, 8, p.221 (2013).

[41] D.Tsokkou, A.Othonos and M.Zervos,' THz conductivity spectroscopy of SnO2 nanowires', Applied Physics Letters, 100, p.133101(2012). Also published in the Virtual Journal of Ultrafast Science, 11, No. 4, April (2012).

[42] Z.Viskadourakis, M.L. Paramês, O. Conde, M.Zervos and J. Giapintzakis, 'Very high thermoelectric power factor of a Fe3O4/SiO2/p-type Si(001) heterostructure', Applied Physics Letters,101,p.033505(2012).

[43]M.Zervos, A.Othonos, D.Tsokkou, J.Kioseoglou, E.Pavlidou and P.Komninou, 'Structural properties of SnO2 nanowires and the effect of donor like defects on the charge distribution' , Physica Status Solidi A, 210 p.226 (2013).

[44] M.Zervos, Z.Viskadourakis, G.Athanasopoulos, M.L. Paramês, O. Conde and J. Giapintzakis, 'Transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterojunction devices', Journal Of Applied Physics, 115, p.033709 (2014).

[45] T.Krasia and M.Zervos, 'Hybrid metal nanoparticle semiconductor nanowire assemblies : Synthesis, properties and applications' , Chapter 5, Handbook Of Functional Materials, 1 : Synthesis and Modification, ISBN: 978-1-62948-364-1, Nova Science Publishers (2013).

[46] M.Zervos, 'Delta (δ)-doping of GaAs nanowires', Physica Status Solidi Rapid Research Letters, 7, p.651(2013).

[47] M.Zervos, 'Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping' Physica Status Solidi Rapid Research Letters, 7, p.194(2013).

[48] A.Othonos, C.Christofies and M.Zervos, Ultrafast spectroscopy of V2O5 nanowires, Applied Physics Letters, 103, p.133112(2013).

[49] M.Zervos, C.Mihailescu, J.Giapintzakis, P.komninou, N.Florini and J.Kioseoglou 'Broad compositional tunability of indium tin oxide nanowires grown by the vapor liquid solid mechanism', Applied Physics Letters Materials, 2, p.056104 (2014).

[50]J.Kioseoglou, P.Komninou and M.Zervos 'Thermal oxidation and facet formation mechanisms of Si/SiO2 core-shell nanowires, Physica Status Solidi Rapid Research Letters, 8, p.307 (2014).

[51] M.Zervos, 'Delta (δ)-doping and charge control of III-V core-shell nanowires', Applied Nanoscience, 5, p.629 (2015).

[52] M.Zervos, 'Electronic properties of core-shell nanowire resonant tunneling diodes', Nanoscale Research Letters, 9, p.509 (2014).

[53] E.Karageorgou, M.Zervos and A.Othonos, 'UV emission from low resistance Cu2SnS3/SnO2 and CuInS2/In2O3 nanowires', Applied Physics Letters Materials 2,116107(2014).

[54]M.Zervos,C.Mihailescu, J.Giapintzakis, A.Othonos and C.Luculescu, 'Sulphur passivation and the conversion of SnO2 to SnS2 nanowires', Materials Science and Engineering B, 198, p.10 (2015).

[55]M.Zervos,C.Mihailescu, J.Giapintzakis, A.Othonos , A.Travlos, C.Luculescu, 'Electrical, structural and optical properties of sulphurised Sn doped In2O3 nanowires',Nanoscale Research Letters 10, p.307(2015).

[56] K.Othonos, M.Zervos, C.Christofidis and A.Othonos, 'Ultrafast spectroscopy and red emission of Ga2O3/Ga2S3 nanowires, Nanoscale Research Letters , 10, p.304 (2015).

[57] T.Pavloudis, M.Zervos, Ph.Komninou and J.Kioseoglou, Ab initio electronic structure calculations of (SnxSi1-x)3N4, Thin Solid Films, 10.1016/j.tsf.2015.09.072 (2015).

[58] M.Zervos, C.Mihailescu, J.Giapintzakis, A.Othonos and A.Travlos, Sulfur doped M=Al,W/Sn:In2O3 nanowires with near infra red emission', AIP Advances, 5, p.097101 (2015).

[59] M.Zervos, A.Othonos, V.Gianneta, A.Travlos and A.G.Nassiopoulou 'Sn doped Ga2O3 and Ga2S3 nanowires with red emission for solar energy spectral shifting', Journal of Applied Physics, 118, p.194302(2015).

[60] M.Zervos, A.Othonos, V.Gianneta and A.G.Nassiopoulou, Pb doping of In2O3 nanowires and their conversion to highly conductive PbS/In2O3 nanowires with infra red emission, Accepted, DOI : 10.1016/J.MatLet.2015.12.041 Materials Letters (2015).

[61] M.Zervos and A.Othonos, 'Compositional tuning, properties and the conversion of In2xGa2-2xO3 nanowires into I–III–VI2 chalcopyrite Cu(InxGa1-x)S2 Accepted,DOI10.15761/FNN.1000106, Frontiers in Nanoscience and Nanotechnology (2015).

[62] M.Zervos, E.Vasille, Eu.Vasille, E.Karageorgou and A.Othonos, Current transport properties of CuS/SnO2 versus CuS/In2O3 nanowires and negative differential resistance in quantum dot sensitized solar cells', J. Phys. Chem. C, 2016, 120 (1), pp 11–20

[63] M.Zervos, E.Vasille, Eu.Vasille and A.Othonos, Core shell PbS/Sn:In2O3 and branched PbIn2S4 /Sn:In2O3 nanowires in quantum dot sensitized solar cells', Invited Paper in the Focus Issue on Nanowires, Nanotechnology 28, 054004 (2017).

[64] M.Zervos, E.Leontidis, E.Tanasu, Eu.Vasille and A.Othonos, Sn:In2O3 and Sn:In2O3/NiS2 core-shell nanowires on Ni, Mo metal foils and C fibers for H2 and O2 generation',  J. Phys. Chem. C, 2017, 121 (50), pp 27839–27848

Profile Information

M.Zervos obtained his BEng (Honours) in Electrical and Electronic Engineering from the University of Surrey between 1987-1991 and MSc in Microelectronic Materials and Devices at the University of Manchester Institute of Science and Technology (UMIST) between 1991-1992. Completed a PhD in semiconductor physics on 'Delta–doping of InGaAs quantum wells grown by Molecular Beam Epitaxy' in the Department of Physics at the University of Wales,Cardiff between 1994-1998.

Has worked for (a) STC Technology Ltd at Harlow and L.G Semiconductors at Cardiff in the UK (b) Philips Research Laboratories in Eindhoven the Netherlands on semiconductors and nanotechnology and (c) for the University of Crete and the Foundation Of Research and Technology Hellas (FORTH) at the Institute of Electronic Structure and LASERs (IESL) in Greece.

He has a broad range of expertise covering synthesis, electrical ,structural and optical characterization of semiconductor materials, device processing including optical and electron beam lithography and computational semiconductor physics. M.Zervos joined the University in August 2006 and set up the Nanostructured Materials and Devices Laboratory in May 2008 for the growth of semiconductor nanowires and the study of their fundamental properties for energy related device applications . 

He currently teaches mechatronics as part of the undergraduate curriculum and semiconductor physics to postgraduates undertaking research in the materials science group of the department but also for postgraduates from other departments e.g. electrical engineering and physics.

Finally he is a member of the Americal Chemical Society (ACS), chartered engineer (CEng) of the Institute of Electronic and Electrical Engineers (IEE) and also holds the title of chartered physicist (CPhys) of the Institute of Physics (IoP) in the UK.

 

Research activities are currently focused on the synthesis of n- and p-type metal oxide and chalcogenide semiconductor nanowires as well as nitrides for the fabrication of all-inorganic quantum dot sensitized nanowire solar cells, supercapacitors and the photocatalytic generation of hydrogen.

[1] M.L.Ke, X.Chen, M.Zervos, R.Nawaz, M.Elliott, D.I.Westwood and P.Blood, ‘Optical and electrical properties of selectively δ-doped strained InxGa1-xAs/GaAs quantum wells’, Journal of Applied Physics79, No 5 , p2627 (1996).

[2] M.Zervos, A.Bryant, M.Elliott, M.Beck and M.Ilegems, ‘Magnetotransport of delta(δ)-doped In0.53Ga0.47As on InP(001) grown between 390°C -575°C by molecular beam epitaxy’, Applied Physics Letters72, No 20, p2601 (1998).

[3] M.Zervos, D.I.Westwood and M.Elliott, ‘Light induced mobility enhancement in delta(δ)-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)’ Applied Physics Letters74, No 14, p2026 (1999).

[4] M.Zervos, M.Elliott and D.I.Westwood,’Surface micro-roughness and transport properties of Si δ-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular beam epitaxy on GaAs(001) and GaAs(111)B, Applied Physics Letters , 75, No 16, p 2548 (1999).

[5] R.A.Shepherd, M.Elliott, W.G.Herrenden-Harker, M.Zervos and P.R.Morris, ‘Experimental observation of the de Haas-van Alphen effect in a multiband quantum well sample’, Physical Review B60, No 16, p 11277  (1999).

[6] S.Mikroulis, V.Cimalla, A.Kostopoulos, G.Konstantinidis, G.Drakakis, M.Zervos, M.Cengher, and A.Georgakilas,  ‘An Investigation of the nitridation of Al2O3(0001) substrates by a nitrogen radio frequency plasma source’.  Microelectronics, Microsystems & Nanotechnology Conference Proceedings MMN 2000, p.135 (2000).

[7] M. Zervos, A. Kostopoulos , G. Constantinidis , M.Kayambaki and A. Georgakilas, ‘An investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self consistent Poisson-Schrödinger calculations and capacitance-voltage profiling’, Journal of Applied Physics, 91No 7, p 4387 (2001).

[8] M.Zervos, A.Kostopoulos, G.Constantinidis, M.Kayambaki, S.Mikroulis, N.Flytzanis and A.Georgakilas, ‘The pinch-off behavior and charge distribution in   AlGaN-GaN-AlGaN-GaN double heterostructure field effect transistors’, Physica Status Solidi (a), 188, No  1, p259-262 (2001).

[9] M.Androulidaki, A.Georgakilas, F.Peiro, K.Amimer, M.Zervos, K.Tsagaraki, M.Dimakis and A.Cornet, ‘Investigation of Different Si (111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE’ Physica Status Solidi (a), 188, No  2, p515-518 (2001). 

[10] J.Simon, R.Langer, A.Barski, M.Zervos and N.T.Pelekanos, ‘Residual Doping Effects on the Amplitude of Polarization-induced Electric Fields in GaN/AlGaN Quantum Wells’ Physica Status Solidi (a), 188, No  2, p867-870 (2001).

[11] A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, Ph. Komninou, Th. Kehagias, Th. Karakostas , ‘Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE’ Physica Status Solidi (a), 188, No  2, p567-570 (2001).

[12] M.Zervos, ‘An investigation of spin-polarized resonant tunneling through ferromagnet/insulator double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations’, Journal of Applied Physics94, No 3,  p.1776-1782 (2003).Also published in the Virtual Journal of Nanoscale Science and Technology8, No.4  (2003).

[13] M.Zervos and L.F.Feiner, ‘Electronic structure of piezeoelectric  InAs/InP/InAs/InP/InAs (111) nanowires’  Journal of Applied Physics,  95No.1,p.1-11, January 1  (2004). Cited in Nature Materials 3, 769–773 (1 November 2004).

[14] M.Zervos, C.Xenogianni, G.Deligeorgis, M.Androulidaki, P.Savidis, Z.Hatzopoulos and N.Pelekanos, ‘InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates’ Phys.Stat.Sol (c) 3, p 3988-3991,(2006).

[15]  E.Iliopoulos, M.Zervos, A.Adikimenaki, K.Tsagaraki and A.Georgakilas, ‘Properties of Si doped GaN and AlGaN/GaN heterostructures grown by RF MBE on high resistivity Fe doped GaN’ SuperLattices and Microstructures40 p.313 (2006).

[16] G.E. Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, ‘Influence of polarization field on the lasing properties of III-V nitride quantum wells’, Physica E : Low dimensional systems and nanostructures32 , p.558(2006).

[17] M.Zervos, ‘Properties of the ubiquitous p-n junction in semiconductor nanowires’, Semiconductor Science and Technology, 23 , p.075016 (2008).

[18] M.Zervos, N.Pelekanos ‘One-dimensional transfer matrix calculation of current transport in semiconductor nanowires with built-in barriersJournal of Applied Physics104, 054302-1(2008).

[19]  G.E.Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, ‘Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers’ , Journal Of Applied Physics104, p.113101(2008).

[20] A.Othonos, M.Zervos and M.Pervolaraki, ‘Ultra fast carrier relaxation of InN nanowires grown by reactive vapor transport’, Nanoscale Research Letters4, p.122-129 (2009).

[21] M.Zervos, D.Tsokou, M.Pervolaraki and A.Othonos, ‘Low temperature growth of In2O3 and InN nanocrystals on Si(111) by chemical vapor deposition via the sublimation of NH4Cl ’, Nanoscale Research Letters4, p. 491 (2009).

[22] A.Othonos, M.Zervos and D.Tsokkou, ‘Femtosecond carrier dynamics in In2O3 nanocrystals’, Nanoscale Research Letters4, p.526 (2009).

[23] A.Othonos, M.Zervos and D.Tsokkou, ‘Tin oxide nanowires : Influence of trap states on ultra fast carrier relaxation’, Nanoscale Research Letters4, p.828 (2009).

 [24] M.Zervos and A.Othonos, ‘Synthesis of tin nitride nanowires by chemical    vapor deposition’, Nanoscale Research Letters , 4, p.1103 (2009).

[25] D.Tsokkou, A.Othonos and M.Zervos, ‘Defect states of CVD grown GaN nanowires : Effects and mechanisms in the relaxation of carriers’, Journal of Applied Physics 106, p.054311 (2009).

[26] D.Tsokou, M.Zervos and A.Othonos, ‘Ultrafast spectroscopy of In2O3 nanowires grown by the vapor-liquid-solid method ’, Journal Of Applied Physics 106, p. 084307(2009). 

[27] A.Othonos and M.Zervos, ‘Carrier relaxation dynamics in tin nitride nanowires grown by chemical vapor deposition’, Journal of Applied Physics, 106 p. 114303(2009).

[28] M.Zervos, P.Papageorgiou and A.Othonos, ’High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition‘, Journal Of Crystal Growth,312,p.656 (2010).

[29] A.Othonos and M.Zervos, ‘Carrier dynamics in indium sulphide nanowires grown by chemical vapor deposition’, Physica Status Solidi A 207, p.2258(2010).

[30] M.Zervos and A.Othonos, ‘Hydride assisted growth of GaN nanowires on Au/Si(001) via the direct reaction of Ga with NH3 and H2‘, Journal of Crystal Growth312, p.2631(2010).

[31] M.Zervos and A.Othonos , ‘Enhanced growth and photoluminescence properties of SnxNy ( x > y) nanowires grown by halide chemical vapor deposition’, Journal Of Crystal Growth316, p.25, (2011).

[32] A.Othonos, M.Zervos and C.Christofides, ‘Carrier dynamics in β-Ga2O3 nanowires’, Journal Of Applied Physics108, p.124302(2010). Also published in the Virtual Journal of Ultrafast Science10, No.1 (2011).

[33] A.Othonos, M.Zervos and C.Christofides, ‘A systematic investigation into the conversion of b-Ga2O3 to GaN nanowires using NH3 and H2 : Effects on the photoluminescence ’ Journal of Applied Physics, 108, p.124319(2010). Also published in the Virtual Journal of Ultrafast Science 10, No.1 (2011).

[34] M.Zervos and A.Othonos, ‘Gallium hydride vapor phase epitaxy of GaN nanowires’ Nanoscale Research Letters6, p.262 (2011).

[35] P.Papageorgiou, M.Zervos and A.Othonos, ‘An investigation into the conversion of In2O3 to InN nanowires ’ Nanoscale Research Letters6, p.311 (2011).

[36] M.Zervos and A.Othonos, ‘A systematic study of the nitridation of SnO2 nanowires grown via the vapor liquid solid mechanism’ Journal Of Crystal Growth 340,p.28(2012).

[37] A.Othonos and M.Zervos, ’Hole carrier relaxation dynamics in p-type CuO nanowires’, Nanoscale Research Letters 6 p.622 (2011).

[38] M.Zervos, C.Karipi and A.Othonos, ‘The nitridation of ZnO nanowires’,  Nanoscale Research Letters, 7,p.175 (2012).

[39] M.Zervos, M.Demetriou, T.Krassia , A.Othonos, ‘Metal-oxide nanowire growth using hybrid methacrylate noble metal : Au and Pd nanostructured catalysts’, RCS Advances, 2,p.4370 (2012).

[40] M.Zervos, C.Karipi and A.Othonos,’ Zn3N2 nanowires : Growth, properties and oxidation’, Nanoscale Research Letters8, p.221 (2013).

[41] D.Tsokkou, A.Othonos and M.Zervos,’ THz conductivity spectroscopy of SnO2 nanowires’, Applied Physics Letters, 100p.133101(2012). Also published in the Virtual Journal of Ultrafast Science11, No. 4, April (2012).

[42] Z.Viskadourakis, M.L. Paramês, O. Conde, M.Zervos and  J. Giapintzakis, ‘Very high thermoelectric power factor of a Fe3O4/SiO2/p-type Si(001) heterostructure’, Applied Physics Letters,101,p.033505(2012).  

[43]M.Zervos, A.Othonos, D.Tsokkou, J.Kioseoglou, E.Pavlidou and P.Komninou, ‘Structural properties of SnO2 nanowires and the effect of donor like defects on the charge distribution’ , Physica Status Solidi A210 p.226 (2013).

[44] M.Zervos, Z.Viskadourakis, G.Athanasopoulos, M.L. Paramês, O. Conde and  J. Giapintzakis, ‘Transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterojunction devices’, Journal Of Applied Physics115, p.033709 (2014).   

[45] T.Krasia and M.Zervos, 'Hybrid metal nanoparticle semiconductor nanowire assemblies : Synthesis, properties and applications' , Chapter 5, Handbook Of Functional Materials, 1 : Synthesis and Modification, ISBN: 978-1-62948-364-1, Nova Science Publishers (2013).

[46] M.Zervos, ‘Delta (δ)-doping of GaAs nanowires’, Physica Status Solidi Rapid Research Letters, 7p.651(2013).

[47] M.Zervos, ‘Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping’ Physica Status Solidi Rapid Research Letters7, p.194(2013).

[48] A.Othonos, C.Christofies and M.Zervos, Ultrafast spectroscopy of V2O5 nanowires, Applied Physics Letters103, p.133112(2013).

[49] M.Zervos, C.Mihailescu, J.Giapintzakis, P.komninou, N.Florini and J.Kioseoglou ‘Broad compositional tunability of indium tin oxide nanowires grown by the vapor liquid solid mechanism’, Applied Physics Letters Materials, 2p.056104 (2014).

[50]J.Kioseoglou, P.Komninou and M.Zervos ‘Thermal oxidation and facet formation mechanisms of Si/SiO2 core-shell nanowires, Physica Status Solidi Rapid Research Letters8, p.307 (2014).

[51] M.Zervos, ‘Delta (δ)-doping and charge control of III-V core-shell nanowires’, Applied Nanoscience, 5, p.629 (2015).

[52] M.Zervos, ‘Electronic properties of core-shell nanowire resonant tunneling diodes’, Nanoscale Research Letters9, p.509 (2014).

[53] E.Karageorgou, M.Zervos and A.Othonos, ‘UV emission from low resistance Cu2SnS3/SnO2 and CuInS2/In2O3 nanowires‘, Applied Physics Letters Materials 2,116107(2014).

[54]M.Zervos,C.Mihailescu, J.Giapintzakis, A.Othonos and C.Luculescu, ‘Sulphur passivation and the conversion of SnO2 to SnS2 nanowires’,  Materials Science and Engineering B, 198p.10 (2015).

[55]M.Zervos,C.Mihailescu, J.Giapintzakis, A.Othonos , A.Travlos, C.Luculescu, ‘Electrical, structural and optical properties of sulphurised Sn doped In2O3  nanowires’,Nanoscale Research Letters 10, p.307(2015).

[56] K.Othonos, M.Zervos, C.Christofidis and A.Othonos, ‘Ultrafast spectroscopy and red emission of Ga2O3/Ga2S3 nanowires, Nanoscale Research Letters , 10, p.304 (2015).

[57] T.Pavloudis, M.Zervos, Ph.Komninou and J.Kioseoglou, Ab initio electronic structure calculations of (SnxSi1-x)3N4Thin Solid Films, 10.1016/j.tsf.2015.09.072 (2015).

[58] M.Zervos, C.Mihailescu, J.Giapintzakis, A.Othonos and A.Travlos, Sulfur doped M=Al,W/Sn:In2O3 nanowires with near infra red emission', AIP Advances, 5, p.097101 (2015). 

[59] M.Zervos, A.Othonos, V.Gianneta, A.Travlos and A.G.Nassiopoulou  ‘Sn doped Ga2Oand Ga2S3 nanowires with red emission for solar energy spectral shifting', Journal of Applied Physics, 118, p.194302(2015).

[60] M.Zervos, A.Othonos, V.Gianneta and A.G.Nassiopoulou, Pb doping of In2O3  nanowires and their conversion to highly conductive PbS/In2O3  nanowires with infra red emission, Accepted, DOI : 10.1016/J.MatLet.2015.12.041 Materials Letters (2015).

[61] M.Zervos and A.Othonos, 'Compositional tuning, properties and the conversion of In2xGa2-2xO3 nanowires into I–III–VI2 chalcopyrite Cu(InxGa1-x)SAccepted,DOI10.15761/FNN.1000106, Frontiers in Nanoscience and Nanotechnology (2015). 

[62] M.Zervos, E.Vasille, Eu.Vasille, E.Karageorgou and A.Othonos, Current transport properties of CuS/SnO2 versus CuS/In2O3 nanowires and negative differential resistance in quantum dot sensitized solar cells‘, J. Phys. Chem. C, 2016, 120 (1), pp 11–20

[63] M.Zervos, E.Vasille, Eu.Vasille and A.Othonos, Core shell PbS/Sn:In2O3 and branched PbIn2S4 /Sn:In2Onanowires in quantum dot sensitized solar cells‘, Invited Paper in the Focus Issue on Nanowires, Nanotechnology, 28, 054004 (2017).

[64] M.Zervos, E.Leontidis, E.Tanasu, Eu.Vasille and A.Othonos, Sn:In2O3 and Sn:In2O3/NiS2 core-shell nanowires on Ni, Mo metal foils and C fibers for H2 and O2 generation', J. Phys. Chem. C, 2017, 121 (50), pp 27839–27848