Born in the UK, M.Zervos obtained his BEng Honours in Electrical and Electronic Engineering from the University of Surrey between 1987-1991 and MSc in Microelectronic Materials and Devices at the University of Manchester Institute of Science and Technology (UMIST) between 1991-1992.
Completed a PhD in semiconductor physics on 'Delta–doping of InGaAs quantum wells grown by Molecular Beam Epitaxy', under Prof M.Elliott in the Department of Physics at the University of Wales,Cardiff between 1994-1998.
Has worked for STC Technology Ltd at Harlow in the UK and Philips Research Laboratories in Eindhoven the Netherlands, on compound semiconductors and nanotechnology but also for the University of Crete and the Foundation Of Research and Technology Hellas (FORTH) at the Institute of Electronic Structure and LASERs (IESL) in Greece. He has a broad range of expertise covering synthesis, electrical , structural and optical characterization of semiconductor materials, device processing i.e. optical and electron beam lithography and computational semiconductor physics.
M.Zervos joined the University in August 2006 and set up from scratch the Nanostructured Materials and Devices Lab in May 2008. At present he teaches semiconductors as a materials science elective and micro manufacturing at the undergraduate and postgraduate level.
Finally he is a chartered engineer (CEng) of the Institute of Electronic and Electrical Engineers (IEE) and also holds the title of chartered physicist (CPhys) of the Institute of Physics (IoP) in the UK.

Research activities are focused on the synthesis, fundamental properties and assembly of semiconductor nanowires for the fabrication of electronic, optoelectronic and sensor nanoscale devices.

‘Questions about what decides whether a photon is to go through or not can not be investigated by experiment and should be regarded outside the domain of science...science is concerned only with observable things.’ P.A.M. Dirac, The Principles Of Quantum Mechanics, Oxford University Press (1947)

In Peer Reviewed Journals

[1] M.L.Ke, X.Chen, M.Zervos, R.Nawaz, M.Elliott, D.I.Westwood and P.Blood, ‘Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells’, Journal of Applied Physics, 79, No 5 , p2627 (1996).

[2] M.Zervos, A.Bryant, M.Elliott, M.Beck and M.Ilegems, ‘Magnetotransport of delta-doped In0.53Ga0.47As on InP(001) grown between 390C -575C by molecular beam epitaxy’, Applied Physics Letters, 72, No 20, p2601 (1998).

[3] M.Zervos, D.I.Westwood and M.Elliott, ‘Light induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)’ Applied Physics Letters, 74, No 14, p2026 (1999).

[4] M.Zervos, M.Elliott and D.I.Westwood,’Surface micro-roughness and transport properties of Si delta-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular beam epitaxy on GaAs(001) and GaAs(111)B, Applied Physics Letters , 75, No 16, p 2548 (1999).

[5] R.A.Shepherd, M.Elliott, W.G.Herrenden-Harker, M.Zervos and P.R.Morris, ‘Experimental observation of the de Haas-van Alphen effect in a multiband quantum well sample’, Physical Review B, 60, No 16, p 11277 (1999).

[6] S.Mikroulis, V.Cimalla, A.Kostopoulos, G.Konstantinidis, G.Drakakis, M.Zervos, M.Cengher, and A.Georgakilas, ‘An Investigation of the nitridation of Al2O3(0001) substrates by a nitrogen radio frequency plasma source’. Microelectronics, Microsystems & Nanotechnology Conference proceedings MMN 2000, p.135 (2000).

[7] M. Zervos, A. Kostopoulos , G. Constantinidis , M.Kayambaki and A. Georgakilas, ‘An investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self consistent Poisson-Schrödinger calculations and capacitance-voltage profiling’, Journal of Applied Physics, 91, No 7, p 4387 (2001).

[8] M.Zervos, A.Kostopoulos, G.Constantinidis, M.Kayambaki, S.Mikroulis, N.Flytzanis and A.Georgakilas, ‘The pinch-off behavior and charge distribution in AlGaN-GaN-AlGaN-GaN double heterostructure field effect transistors’, Physica Status Solidi (a), 188, No 1, p259-262 (2001).

[9] M.Androulidaki, A.Georgakilas, F.Peiro, K.Amimer, M.Zervos, K.Tsagaraki, M.Dimakis and A.Cornet, ‘Investigation of Different Si (111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE’ Physica Status Solidi (a), 188, No 2, p515-518 (2001).

[10] J.Simon, R.Langer, A.Barski, M.Zervos and N.T.Pelekanos, ‘Residual Doping Effects on the Amplitude of Polarization-induced Electric Fields in GaN/AlGaN Quantum Wells’ Physica Status Solidi (a), 188, No 2, p867-870 (2001).

[11] A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, Ph. Komninou, Th. Kehagias, Th. Karakostas , ‘Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE’ Physica Status Solidi (a), 188, No 2, p567-570 (2001).

[12] M.Zervos, ‘An investigation of spin-polarized resonant tunneling through ferromagnet/insulator double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations’, Journal of Applied Physics, 94, No 3, p.1776-1782 (2003) . Also published in the Virtual Journal of Nanoscale Science and Technology, 8, No.4 (2003).

[13] M.Zervos and L.F.Feiner, ‘Electronic structure of piezeoelectric InAs/InP/InAs/InP/InAs (111) nanowires’ Journal of Applied Physics, 95, No.1,p.1-11, January 1 (2004). Cited in Nature Materials 3, 769–773 (2004).

[14] M.Zervos, C.Xenogianni, G.Deligeorgis, M.Androulidaki, P.Savidis, Z.Hatzopoulos and N.Pelekanos, ‘InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates’ Phys.Stat.Sol (c) 3, p 3988-3991,(2006).

[15] E.Iliopoulos, M.Zervos, A.Adikimenaki, K.Tsagaraki and A.Georgakilas, ‘Properties of Si doped GaN and AlGaN/GaN heterostructures grown by RF MBE on high resistivity Fe doped GaN’ SuperLattices and Microstructures, 40 p.313 (2006).

[16] G.E. Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, ‘Influence of polarization field on the lasing properties of III-V nitride quantum wells’, Physica E : Low dimensional systems and nanostructures, 32 , p.558(2006).

[17] M.Zervos, ‘Properties of the ubiquitous p-n junction in semiconductor nanowires’, Semiconductor Science and Technology, 23 , p.075016 (2008).

[18] M.Zervos, N.Pelekanos ‘One-dimensional transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers’, Journal of Applied Physics, 104, 054302-1(2008).

[19] G.E. Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, ‘Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers’ , Journal Of Applied Physics, 104, p.113101(2008).

[20] A.Othonos, M.Zervos and M.Pervolaraki, ‘Ultra fast carrier relaxation of InN nanowires grown by reactive vapor transport’, Nanoscale Research Letters, 4, p.122-129 (2009).

[21] M.Zervos, D.Tsokou, M.Pervolaraki and A.Othonos, ‘Low temperature growth of In2O3 and InN nanocrystals on Si(111) by chemical vapor deposition via the sublimation of NH4Cl in In ’, Nanoscale Research Letters, 4, p. 491 (2009).

[22] A.Othonos, M.Zervos and D.Tsokkou, ‘Femtosecond carrier dynamics in In2O3 nanocrystals’, Nanoscale Research Letters, 4, p.526 (2009).

[23] A.Othonos, M.Zervos and D.Tsokkou, ‘Tin oxide nanowires : Influence of trap states on ultra fast carrier relaxation’, Nanoscale Research Letters, 4, p.828 (2009).

[24] M.Zervos and A.Othonos, ‘Synthesis of tin nitride nanowires by chemical vapor deposition’, Nanoscale Research Letters , 4, p.1103 (2009).

[25] D.Tsokkou, A.Othonos and M.Zervos, ‘Defect states of CVD grown GaN nanowires : Effects and mechanisms in the relaxation of carriers’, Journal of Applied Physics 106, 054311 (2009).

[26] D.Tsokou, M.Zervos and A.Othonos, ‘Ultrafast spectroscopy of In2O3 nanowires grown by the vapor-liquid-solid method ’, Journal Of Applied Physics 106, p. 084307 (2009).

[27] A.Othonos and M.Zervos, ‘Carrier relaxation dynamics in tin nitride nanowires grown by chemical vapor deposition’, Journal of Applied Physics, 106, p.114303(2009).

[28] M.Zervos, P.Papageorgiou and A.Othonos, ’High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition‘,Journal Of Crystal Growth,312,p.656(2010).

[29] A.Othonos and M.Zervos, ‘Carrier dynamics in indium sulphide nanowires grown by chemical vapor deposition’, Physica Status Solidi A 207, p.2258(2010).

[30] M.Zervos and A.Othonos, ‘Hydride assisted growth of GaN nanowires on Au/Si(001) via the direct reaction of Ga with NH3 and H2‘ , Journal of Crystal Growth, 312, p.2631(2010).

[31] M.Zervos and A.Othonos , ‘Enhanced growth and photoluminescence properties of SnxNy ( x > y) nanowires grown by halide chemical vapor deposition’, Journal Of Crystal Growth, 316, p.25, (2011).

[32] A.Othonos, M.Zervos and C.Christofides, ‘Carrier dynamics in Ga2O3 nanowires’, Journal Of Applied Physics, 108,p.124302(2010). Also published in the Virtual Journal of Ultrafast Science, 10, No.1 (2011).

[33] A.Othonos, M.Zervos and C.Christofides, ‘A systematic investigation into the conversion of Ga2O3 to GaN nanowires using NH3 and H2 : Effects on the photoluminescence ’ Journal of Applied Physics,108,p.124319(2010). Also published in the Virtual Journal of Ultrafast Science 10, No.1 (2011).

[34] M.Zervos and A.Othonos,‘Gallium hydride vapor phase epitaxy of GaN nanowires’ Nanoscale Research Letters, 6, p.262(2011).

[35] P.Papageorgiou, M.Zervos and A.Othonos,'An investigation into the conversion of In2O3 to InN nanowires ’Nanoscale Research Letters,6, p.311 (2011).

[36] M.Zervos and A.Othonos, ‘A systematic study of the nitridation of SnO2 nanowires grown via the vapor liquid solid mechanism ’ Journal Of Crystal Growth,340,p28(2012).

[37] A.Othonos and M.Zervos, 'Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires' Nanoscale Research Letters 6,p.622 (2011).

[38] M.Zervos, C.Karipi and A.Othonos, 'The nitridation of ZnO nanowires', Nanoscale Research Letters,7,p.175(2012).

[39] D.Tsokkou, A.Othonos and M.Zervos ’THz conductivity spectroscopy of SnO2 nanowires’, Applied Physics Letters, 100, p.133101 (2012).

[40] M.Zervos, M.Demetriou, T.Krassia , A.Othonos and R.P.Turcu, ‘Metal-oxide nanowire growth using hybrid methacrylate noble metal : Au and Pd nanostructured catalysts’, RCS Advances,2,p.4370 (2012).

Personal Website: http://www.ucy.ac.cy/