MATTHEW ZERVOS
+357 22894523
...
ASSOCIATE PROFESSOR
Faculty of Engineering
Green Park, Tel 22894523
91, Aglantzias Ave.
M.Zervos obtained his BEng (Honours) in Electrical and Electronic Engineering from the University of Surrey between 1987-1991 and MSc in Microelectronic Materials and Devices at the University of Manchester Institute of Science and Technology (UMIST) between 1991-1992. Completed a PhD in semiconductor physics on 'Delta–doping of InGaAs quantum wells grown by Molecular Beam Epitaxy' in the Department of Physics at the University of Wales,Cardiff between 1994-1998.
Has worked for (a) STC Technology Ltd at Harlow and LG Semiconductors at Cardiff in the UK (b) Philips Research Laboratories in Eindhoven the Netherlands, on semiconductors and nanotechnology and (c) the University of Crete and the Foundation Of Research and Technology Hellas (FORTH) at the Institute of Electronic Structure and LASERs (IESL) in Greece.
He has a broad range of expertise covering synthesis, electrical ,structural and optical characterization of semiconductor materials, device processing including optical and electron beam lithography and computational semiconductor physics. M.Zervos joined the University in August 2006 and set up the Nanostructured Materials and Devices Laboratory in May 2008 for the growth of semiconductor nanowires and the study of their fundamental properties for energy related device applications .
He currently teaches (a) Mechatronics and (b) Introduction to Nanoscale Science and Nanotechnology as part of the undergraduate curriculum and (c) semiconductor physics to postgraduates undertaking research in the materials science group of the department but also for postgraduates from other departments e.g. electrical engineering and physics.
He is a member of the American Chemical Society (ACS), chartered engineer (CEng) of the Institute of Electronic and Electrical Engineers (IEE) and also holds the title of chartered physicist (CPhys) of the Institute of Physics (IoP) in the UK. ORCID, You Tube. Finally he is a diving instructor (Professional Association of Diving Instructors, PADI), plays chess and is into photography.
[1] M.L.Ke, X.Chen, M.Zervos, R.Nawaz, M.Elliott, D.I.Westwood and P.Blood, 'Optical and electrical properties of selectively δ-doped strained InxGa1-xAs/GaAs quantum wells', Journal of Applied Physics, 79, No 5 , p2627 (1996).
[2] M.Zervos, A.Bryant, M.Elliott, M.Beck and M.Ilegems, 'Magnetotransport of delta(δ)-doped In0.53Ga0.47As on InP(001) grown between 390°C -575°C by molecular beam epitaxy', Applied Physics Letters, 72, No 20, p2601 (1998).
[3] M.Zervos, D.I.Westwood and M.Elliott, 'Light induced mobility enhancement in delta(δ)-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)' Applied Physics Letters, 74, No 14, p2026 (1999).
[4] M.Zervos, M.Elliott and D.I.Westwood,'Surface micro-roughness and transport properties of Si δ-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular beam epitaxy on GaAs(001) and GaAs(111)B, Applied Physics Letters , 75, No 16, p 2548 (1999).
[5] R.A.Shepherd, M.Elliott, W.G.Herrenden-Harker, M.Zervos and P.R.Morris, 'Experimental observation of the de Haas-van Alphen effect in a multiband quantum well sample', Physical Review B, 60, No 16, p 11277 (1999).
[6] S.Mikroulis, V.Cimalla, A.Kostopoulos, G.Konstantinidis, G.Drakakis, M.Zervos, M.Cengher, and A.Georgakilas, 'An Investigation of the nitridation of Al2O3(0001) substrates by a nitrogen radio frequency plasma source'. Microelectronics, Microsystems & Nanotechnology Conference Proceedings MMN 2000, p.135 (2000).
[7] M. Zervos, A. Kostopoulos , G. Constantinidis , M.Kayambaki and A. Georgakilas, 'An investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self consistent Poisson-Schrödinger calculations and capacitance-voltage profiling', Journal of Applied Physics, 91, No 7, p 4387 (2001).
[8] M.Zervos, A.Kostopoulos, G.Constantinidis, M.Kayambaki, S.Mikroulis, N.Flytzanis and A.Georgakilas, 'The pinch-off behavior and charge distribution in AlGaN-GaN-AlGaN-GaN double heterostructure field effect transistors', Physica Status Solidi (a), 188, No 1, p259-262 (2001).
[9] M.Androulidaki, A.Georgakilas, F.Peiro, K.Amimer, M.Zervos, K.Tsagaraki, M.Dimakis and A.Cornet, 'Investigation of Different Si (111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE' Physica Status Solidi (a), 188, No 2, p515-518 (2001).
[10] J.Simon, R.Langer, A.Barski, M.Zervos and N.T.Pelekanos, 'Residual Doping Effects on the Amplitude of Polarization-induced Electric Fields in GaN/AlGaN Quantum Wells' Physica Status Solidi (a), 188, No 2, p867-870 (2001).
[11] A. Georgakilas, S. Mikroulis, V. Cimalla, M. Zervos, A. Kostopoulos, Ph. Komninou, Th. Kehagias, Th. Karakostas , 'Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE' Physica Status Solidi (a), 188, No 2, p567-570 (2001).
[12] M.Zervos, 'An investigation of spin-polarized resonant tunneling through ferromagnet/insulator double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations', Journal of Applied Physics, 94, No 3, p.1776-1782 (2003).Also published in the Virtual Journal of Nanoscale Science and Technology, 8, No.4 (2003).
[13] M.Zervos and L.F.Feiner, 'Electronic structure of piezeoelectric InAs/InP/InAs/InP/InAs (111) nanowires' Journal of Applied Physics, 95, No.1,p.1-11, January 1 (2004). Cited in Nature Materials 3, 769–773 (1 November 2004).
[14] M.Zervos, C.Xenogianni, G.Deligeorgis, M.Androulidaki, P.Savidis, Z.Hatzopoulos and N.Pelekanos, 'InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates' Phys.Stat.Sol (c) 3, p 3988-3991,(2006).
[15] E.Iliopoulos, M.Zervos, A.Adikimenaki, K.Tsagaraki and A.Georgakilas, 'Properties of Si doped GaN and AlGaN/GaN heterostructures grown by RF MBE on high resistivity Fe doped GaN' SuperLattices and Microstructures, 40 p.313 (2006).
[16] G.E. Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, 'Influence of polarization field on the lasing properties of III-V nitride quantum wells', Physica E : Low dimensional systems and nanostructures, 32 , p.558(2006).
[17] M.Zervos, 'Properties of the ubiquitous p-n junction in semiconductor nanowires', Semiconductor Science and Technology, 23 , p.075016 (2008).
[18] M.Zervos, N.Pelekanos 'One-dimensional transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers', Journal of Applied Physics, 104, 054302-1(2008).
[19] G.E.Dialynas, G. Deligeorgis, M. Zervos, and N.T. Pelekanos, 'Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers' , Journal Of Applied Physics, 104, p.113101(2008).
[20] A.Othonos, M.Zervos and M.Pervolaraki, 'Ultra fast carrier relaxation of InN nanowires grown by reactive vapor transport', Nanoscale Research Letters, 4, p.122-129 (2009).
[21] M.Zervos, D.Tsokou, M.Pervolaraki and A.Othonos, 'Low temperature growth of In2O3 and InN nanocrystals on Si(111) by chemical vapor deposition via the sublimation of NH4Cl ', Nanoscale Research Letters, 4, p. 491 (2009).
[22] A.Othonos, M.Zervos and D.Tsokkou, 'Femtosecond carrier dynamics in In2O3 nanocrystals', Nanoscale Research Letters, 4, p.526 (2009).
[23] A.Othonos, M.Zervos and D.Tsokkou, 'Tin oxide nanowires : Influence of trap states on ultra fast carrier relaxation', Nanoscale Research Letters, 4, p.828 (2009).
[24] M.Zervos and A.Othonos, 'Synthesis of tin nitride nanowires by chemical vapor deposition', Nanoscale Research Letters , 4, p.1103 (2009).
[25] D.Tsokkou, A.Othonos and M.Zervos, 'Defect states of CVD grown GaN nanowires : Effects and mechanisms in the relaxation of carriers', Journal of Applied Physics 106, p.054311 (2009).
[26] D.Tsokou, M.Zervos and A.Othonos, 'Ultrafast spectroscopy of In2O3 nanowires grown by the vapor-liquid-solid method ', Journal Of Applied Physics 106, p. 084307(2009).
[27] A.Othonos and M.Zervos, 'Carrier relaxation dynamics in tin nitride nanowires grown by chemical vapor deposition', Journal of Applied Physics, 106 p. 114303(2009).
[28] M.Zervos, P.Papageorgiou and A.Othonos, 'High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition', Journal Of Crystal Growth,312,p.656 (2010).
[29] A.Othonos and M.Zervos, 'Carrier dynamics in indium sulphide nanowires grown by chemical vapor deposition', Physica Status Solidi A 207, p.2258(2010).
[30] M.Zervos and A.Othonos, 'Hydride assisted growth of GaN nanowires on Au/Si(001) via the direct reaction of Ga with NH3 and H2', Journal of Crystal Growth, 312, p.2631(2010).
[31] M.Zervos and A.Othonos , 'Enhanced growth and photoluminescence properties of SnxNy ( x > y) nanowires grown by halide chemical vapor deposition', Journal Of Crystal Growth, 316, p.25, (2011).
[32] A.Othonos, M.Zervos and C.Christofides, 'Carrier dynamics in β-Ga2O3 nanowires', Journal Of Applied Physics, 108, p.124302(2010). Also published in the Virtual Journal of Ultrafast Science, 10, No.1 (2011).
[33] A.Othonos, M.Zervos and C.Christofides, 'A systematic investigation into the conversion of b-Ga2O3 to GaN nanowires using NH3 and H2 : Effects on the photoluminescence ' Journal of Applied Physics, 108, p.124319(2010). Also published in the Virtual Journal of Ultrafast Science 10, No.1 (2011).
[34] M.Zervos and A.Othonos, 'Gallium hydride vapor phase epitaxy of GaN nanowires' Nanoscale Research Letters, 6, p.262 (2011).
[35] P.Papageorgiou, M.Zervos and A.Othonos, 'An investigation into the conversion of In2O3 to InN nanowires ' Nanoscale Research Letters, 6, p.311 (2011).
[36] M.Zervos and A.Othonos, 'A systematic study of the nitridation of SnO2 nanowires grown via the vapor liquid solid mechanism' Journal Of Crystal Growth 340,p.28(2012).
[37] A.Othonos and M.Zervos, 'Hole carrier relaxation dynamics in p-type CuO nanowires', Nanoscale Research Letters 6 p.622 (2011).
[38] M.Zervos, C.Karipi and A.Othonos, 'The nitridation of ZnO nanowires', Nanoscale Research Letters, 7,p.175 (2012).
[39] M.Zervos, M.Demetriou, T.Krassia , A.Othonos, 'Metal-oxide nanowire growth using hybrid methacrylate noble metal : Au and Pd nanostructured catalysts', RCS Advances, 2,p.4370 (2012).
[40] M.Zervos, C.Karipi and A.Othonos,' Zn3N2 nanowires : Growth, properties and oxidation', Nanoscale Research Letters, 8, p.221 (2013).
[41] D.Tsokkou, A.Othonos and M.Zervos,' THz conductivity spectroscopy of SnO2 nanowires', Applied Physics Letters, 100, p.133101(2012).
Also published in the Virtual Journal of Ultrafast Science, 11, No. 4, April (2012).
[42] Z.Viskadourakis, M.L. Paramês, O. Conde, M.Zervos and J. Giapintzakis, 'Very high thermoelectric power factor of a Fe3O4/SiO2/p-type Si(001) heterostructure', Applied Physics Letters,101,p.033505(2012).
[43]M.Zervos, A.Othonos, D.Tsokkou, J.Kioseoglou, E.Pavlidou and P.Komninou, 'Structural properties of SnO2 nanowires and the effect of donor like defects on the charge distribution' , Physica Status Solidi A, 210 p.226 (2013).
[44] M.Zervos, Z.Viskadourakis, G.Athanasopoulos, M.L. Paramês, O. Conde and J. Giapintzakis, 'Transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterojunction devices', Journal Of Applied Physics, 115, p.033709 (2014).
[45] T.Krasia and M.Zervos, 'Hybrid metal nanoparticle semiconductor nanowire assemblies : Synthesis, properties and applications' , Chapter 5, Handbook Of Functional Materials, 1 : Synthesis and Modification, ISBN: 978-1-62948-364-1, Nova Science Publishers (2013).
[46] M.Zervos, 'Delta (δ)-doping of GaAs nanowires', Physica Status Solidi Rapid Research Letters, 7, p.651(2013).
[47] M.Zervos, 'Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping' Physica Status Solidi Rapid Research Letters, 7, p.194(2013).
[48] A.Othonos, C.Christofies and M.Zervos, Ultrafast spectroscopy of V2O5 nanowires, Applied Physics Letters, 103, p.133112(2013).
[49] M.Zervos, C.Mihailescu, J.Giapintzakis, P.komninou, N.Florini and J.Kioseoglou 'Broad compositional tunability of indium tin oxide nanowires grown by the vapor liquid solid mechanism', Applied Physics Letters Materials, 2, p.056104 (2014).
[50]J.Kioseoglou, P.Komninou and M.Zervos 'Thermal oxidation and facet formation mechanisms of Si/SiO2 core-shell nanowires, Physica Status Solidi Rapid Research Letters, 8, p.307 (2014).
[51] M.Zervos, 'Delta (δ)-doping and charge control of III-V core-shell nanowires', Applied Nanoscience, 5, p.629 (2015).
[52] M.Zervos, 'Electronic properties of core-shell nanowire resonant tunneling diodes', Nanoscale Research Letters, 9, p.509 (2014).
[53] E.Karageorgou, M.Zervos and A.Othonos, 'UV emission from low resistance Cu2SnS3/SnO2 and CuInS2/In2O3 nanowires', Applied Physics Letters Materials 2,116107(2014).
[54]M.Zervos,C.Mihailescu, J.Giapintzakis, A.Othonos and C.Luculescu, 'Sulphur passivation and the conversion of SnO2 to SnS2 nanowires', Materials Science and Engineering B, 198, p.10 (2015).
[55]M.Zervos,C.Mihailescu, J.Giapintzakis, A.Othonos , A.Travlos, C.Luculescu, 'Electrical, structural and optical properties of sulphurised Sn doped In2O3 nanowires',Nanoscale Research Letters 10, p.307(2015).
[56] K.Othonos, M.Zervos, C.Christofidis and A.Othonos, 'Ultrafast spectroscopy and red emission of Ga2O3/Ga2S3 nanowires, Nanoscale Research Letters , 10, p.304 (2015).
[57] T.Pavloudis, M.Zervos, Ph.Komninou and J.Kioseoglou, Ab initio electronic structure calculations of (SnxSi1-x)3N4, Thin Solid Films, 10.1016/j.tsf.2015.09.072 (2015).
[58] M.Zervos, C.Mihailescu, J.Giapintzakis, A.Othonos and A.Travlos, Sulfur doped M=Al,W/Sn:In2O3 nanowires with near infra red emission', AIP Advances, 5, p.097101 (2015).
[59] M.Zervos, A.Othonos, V.Gianneta, A.Travlos and A.G.Nassiopoulou 'Sn doped Ga2O3 and Ga2S3 nanowires with red emission for solar energy spectral shifting', Journal of Applied Physics, 118, p.194302(2015).
[60] M.Zervos, A.Othonos, V.Gianneta and A.G.Nassiopoulou, Pb doping of In2O3 nanowires and their conversion to highly conductive PbS/In2O3 nanowires with infra red emission, Accepted, DOI : 10.1016/J.MatLet.2015.12.041 Materials Letters (2015).
[61] M.Zervos and A.Othonos, 'Compositional tuning, properties and the conversion of In2xGa2-2xO3 nanowires into I–III–VI2 chalcopyrite Cu(InxGa1-x)S2 Accepted,DOI10.15761/FNN.1000106, Frontiers in Nanoscience and Nanotechnology (2015).
[62] M.Zervos, E.Vasille, Eu.Vasille, E.Karageorgou and A.Othonos, Current transport properties of CuS/SnO2 versus CuS/In2O3 nanowires and negative differential resistance in quantum dot sensitized solar cells', J. Phys. Chem. C, 2016, 120 (1), pp 11–20
[63] M.Zervos, E.Vasille, Eu.Vasille and A.Othonos, Core shell PbS/Sn:In2O3 and branched PbIn2S4 /Sn:In2O3 nanowires in quantum dot sensitized solar cells', Invited Paper in the Focus Issue on Nanowires, Nanotechnology 28, 054004 (2017).
[64] M.Zervos, E.Leontidis, E.Tanasu, Eu.Vasille and A.Othonos, Sn:In2O3 and Sn:In2O3/NiS2 core-shell nanowires on Ni, Mo metal foils and C fibers for H2 and O2 generation', J. Phys. Chem. C, 2017, 121 (50), pp 27839–27848
[65] M.Zervos, A.Othonos, E.Tanasu and Eu.Vasille, Doping and Conductivity Limitations in Sb:SnO2 Nanowires Grown by the Vapor Liquid Solid Mechanism', Accepted For Publication in J. Phys. Chem. C, 2018.
[66] M.Zervos, A.Othonos, E.Tanasu, Eu.Vasille and E.Leontidis, SnO2/PbOx (x = 1, 2) Core−Shell Nanowires and Their Growth on C‑Fiber Networks for Energy Storage, Accepted For Publication in J. Phys. Chem. C, 2018.
[67] M.Zervos, N.Lathiotakis, N.Kelaidis, A.Othonos, E.Tanasu, Eu.Vasille, Epitaxial Highly Ordered Sb: SnO2 Nanowires Grown by the Vapor-Liquid-Solid Mechanism on m-, r- and a-Al2O3 Accepted For Publication RSC, Nanoscale Advances, 2019.
[68] A.Charalampous, M.Zervos, S.Kioseoglou, K.Tsagaraki, M.Androulidaki, G.Konstantinidis, E.Tanasa, E.Vasile, Epitaxially Oriented Sn:In2O3 Nanowires Grown by the Vapor-Liquid-Solid Mechanism on m-, r- and a-Al2O3 as Scaffolds for Nanostructured Solar Cells, Accepted for Publication, ACS Applied Energy Materials, 2019.
[69] M.Zervos, A.Othonos, E.Tanasa, E.Vasile, High temperature Pb doping of SnO2 Nanowires and Growth Limitations of PbxSn1-xO2 Nanowires Versus Low Teperature Growth of PbxSn1-xO for Energy Conversion and Storage, Accepted for Publication in J.Phys.Chem.C, 2019.
[70] M.Zervos, A.Othonos, M.Sergides, T.Pavloudis and J.Kioseoglou, Observation of the Direct Energy Bandgaps of Defect Tolerant Cu3N by Ultrafast Pump Probe Spectroscopy, Accepted for Publication in J.Phys.Chem. C 2020.
[71] M.Sergides, M.Zervos and A.Othonos, Ultrafast Dynamics and Short Lived Carriers in Cu Nitride and Oxynitride Layers, J.Appl.Phys, 128, 125704 (2020).
[72] N.Kelaidis, S.Bousiadi, M.Zervos, A.Chroneos and N.Lathiotakis, Electronic Properties of the SnxPb1-xO Alloy and Band Allignment of the SnO/PbO System : A DFT Study, Accepted for Publication in Nature, Scientific Reports (2020).
[73] M.Zervos, A.Othonos, T.Pavloudis, S.Giaremis, J.Kioseoglou, K.Mavridou, M.Katsikini, F.Pinakidou and E.Paloura, Impact of Oxygen on the Properties of Cu3N and Cu3-xN1-xO, J.Phys.Chem.C (2021).
[74] N.Kelaidis, M.Zervos, N.Lathiotakis, A.Chroneos, E.Tanasa, E.Eugeniu, Vapor Liquid Solid Growth and Properties of One Dimensional PbO and PbO/SnO2 Nanowires, RSC Materials Advances (2021).
[75] A.Tilemachou, M.Zervos, A.Othonos, T.Pavloudis, J.Kioseoglou, : p-type iodine-doping of Cu3N and its conversion to CuI for the fabrication of CuI/Cu3N p-n heterojunctions, Electronic Materials (2022).
[76] K. Mavridou, M. Zervos, F. Pinakidou, M. Brzhezinskayac and M Katsikini, Oxidation of Cu3N Thin Films Obtained From Cu Annealed Under NH3:O2 Flow: A Raman and N-K-edge NEXAFS Study, J.Alloys and Compounds (2022).
[77] K.Mavridou, M.Katsikini, A.Othonos, N.Florini, P.Komninou, M.Zervos, Cu3N/Cu2O Core-Shell Nanowires : Growth and Properties, RSC Materials Advances (2022).
[78] M.Zervos, Aerosol Assisted Chemical Vapor Deposition (AACVD) of Cu3N on Al2O3 using CuCl2 and NH3, Materials (MDPI) Invited Paper (2022).
[79] E.Prountzou, A.Ioannou, D.Sapalidis, E.Pavlidou, M.Katsikini, A.Othonos and M.Zervos, Critical and Controversial Issues Pertaining to the Growth and Properties of Cu2O in the Context of Energy Conversion, Appled Physics Letter (EPL) Energy, Invited Paper (2023).